Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers |
---|---|
Polarity | N-ch |
Generation | U-MOSⅩ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | TO-220SIS |
---|---|
Package Image | |
JEITA | SC-67 |
Pins | 3 |
Mounting | Through Hole |
Width×Length×Height (mm) |
10.0×15.0×4.5 |
Package Dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 80 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 100 | A |
Power Dissipation | PD | 47 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Gate threshold voltage (Min) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 3.1 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 2.44 | mΩ |
Input capacitance (Typ.) | Ciss | - | 13000 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 179 | nC |
Output charge (Typ.) | Qoss | - | 210 | nC |
Reverse recovery time (Typ.) | trr | - | 66 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 100 | nC |
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