Parallel Operation of MOSFET(TK62N60X) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 600V MOSFET to increase output power.

Device and prastic inductance of PCB trace of parallel operation of MOSFET(TK62N60X) application circuit.
Device and prastic inductance of PCB trace
Simulation circuit of parallel operation of MOSFET(TK62N60X) application circuit.
Simulation circuit

Description

  • Description of the MOSFET behavior on parallel operation by circuit simulation with TK62N60X(TO-247 package), a 600V DTMOSIV-H product, suitable for PFC circuit and primary side for AC-DC power supply.
  • Showing the point of note for parallel operation and offering the solution to achieve more output power.  

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Name Date

Design, File

“Design・File” contains the contents listed below.

Name Date

Toshiba items

Part Number Device Category Portion Usage Description
TK62N60X MOSFET   DTMOSIV-H/600V/40mΩ(max)@VGS=10V/High-speed switching type/TO-247

Documents

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기술 문의

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자주 있는 문의

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