3kW Power Supply for Servers and Telecoms Using Surface-Mounted SiC MOSFET

In recent years, data centers have been growing larger and becoming more densely packed. As a result, power supplies for servers are now required to be more efficient, more powerful, and more space-saving, making high power density essential. By adopting our latest surface-mounted SiC devices, we have achieved high power density by separating the power supply from the main board and implementing it as a sub-board.
In addition to server applications, this solution can also be applied to telecom systems and other applications that use 48V.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

Board Appearance
TW092V65C TW092V65C TW092V65C TRS12V65H TRS12V65H TRS12V65H TW027U65C TW027U65C TW027U65C TW027U65C TW027U65C TPW2900ENH TPW2900ENH TPM1R908QM TPW2900ENH TPM1R908QM DCL540C01

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Features

  • Provides appropriate power devices (SiC MOSFET and SiC diode) and digital Isolator totally
  • Achieving high power density through the adoption of surface-mounted devices (34% improvement compared to our existing design).
  • Total efficiency 94.8% (Vin = 230V at 100% load condition)

Description

Input voltage AC 180 to 264V
Output voltage DC 50V
Output power 3kW
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, ORing Circuit for Output
Efficiency Curve

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power SiC MOSFETs PFC Circuit・2 N-ch SiC MOSFET, 650 V, 0.092 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
SiC Schottky barrier diode PFC Circuit・2 650 V/12 A SiC Schottky Barrier Diode, DFN8×8
Power SiC MOSFETs PSFB Circuit・4 N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
Power MOSFET (N-ch 150V<VDSS≤250V) PSFB Circuit・12 N-ch MOSFET, 200 V, 0.029 Ω@10V, DSOP Advance, U-MOSⅧ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) ORing Circuit・6 N-ch MOSFET, 80 V, 0.0019 Ω@10V, SOP Advance(E), U-MOSⅩ-H
Standard Digital Isolators PSFB Circuit・1 HIGH SPEED QUAD CHANNEL DIGITAL ISOLATORS, High-speed, 150 Mbps, 5000 Vrms, 16pin SOIC Wide body

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

Related Reference Design

1.6 kW Server Power Supply (Upgraded)
1.6 kW 48 V Output Telecommunication Equipment Power Supply

애플리케이션

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
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