3kW Power Supply for Servers and Telecoms Using Surface-Mounted SiC MOSFET

In recent years, data centers have been growing larger and becoming more densely packed. As a result, power supplies for servers are now required to be more efficient, more powerful, and more space-saving, making high power density essential. By adopting our latest surface-mounted SiC devices, we have achieved high power density by separating the power supply from the main board and implementing it as a sub-board.
In addition to server applications, this solution can also be applied to telecom systems and other applications that use 48V.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

Board Appearance
TW092V65C TW092V65C TW092V65C TRS12V65H TRS12V65H TRS12V65H TW027U65C TW027U65C TW027U65C TW027U65C TW027U65C TPW2900ENH TPW2900ENH TPM1R908QM TPW2900ENH TPM1R908QM DCL540C01

Click on components for more details

特性

  • Provides appropriate power devices (SiC MOSFET and SiC diode) and digital Isolator totally
  • Achieving high power density through the adoption of surface-mounted devices (34% improvement compared to our existing design).
  • Total efficiency 94.8% (Vin = 230V at 100% load condition)

說明

Input voltage AC 180 to 264V
Output voltage DC 50V
Output power 3kW
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, ORing Circuit for Output
Efficiency Curve

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power SiC MOSFETs PFC Circuit・2 N-ch SiC MOSFET, 650 V, 0.092 Ω(typ.)@18 V, DFN 8×8, 3rd Gen.
SiC Schottky barrier diode PFC Circuit・2 650 V/12 A SiC Schottky Barrier Diode, DFN8×8
Power SiC MOSFETs PSFB Circuit・4 N-ch SiC MOSFET, 650 V, 0.027 Ω(typ.)@18 V, TOLL, 3rd Gen.
Power MOSFET (N-ch 150V<VDSS≤250V) PSFB Circuit・12 N-ch MOSFET, 200 V, 0.029 Ω@10V, DSOP Advance, U-MOSⅧ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) ORing Circuit・6 N-ch MOSFET, 80 V, 0.0019 Ω@10V, SOP Advance(E), U-MOSⅩ-H
Standard Digital Isolators PSFB Circuit・1 HIGH SPEED QUAD CHANNEL DIGITAL ISOLATORS, High-speed, 150 Mbps, 5000 Vrms, 16pin SOIC Wide body

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

相關參考設計

1.6 kW Server Power Supply (Upgraded)
1.6 kW 48 V Output Telecommunication Equipment Power Supply

應用

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.
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