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3글자 이상 입력하세요.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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3-1(1) Whether the reverse breakdown voltage (VBR) of an ESD protection diode is sufficiently higher than the amplitude (maximum voltage) of the signal line to be protected
As the voltage across an ESD protection diode approaches its reverse breakdown voltage (VBR), leakage current increases. At a voltage close to VBR, the leakage current might distort the waveform of the signal line to be protected. Reverse current (IR) increases exponentially with reverse voltage (VR). It is important to select ESD protection diodes with VRWM higher than the amplitude of the signal lines to be protected.