3-1 Key characteristics for normal operation (in the absence of an ESD event)(1)

3-1(1) Whether the reverse breakdown voltage (VBR) of an ESD protection diode is sufficiently higher than the amplitude (maximum voltage) of the signal line to be protected

As the voltage across an ESD protection diode approaches its reverse breakdown voltage (VBR), leakage current increases. At a voltage close to VBR, the leakage current might distort the waveform of the signal line to be protected. Reverse current (IR) increases exponentially with reverse voltage (VR). It is important to select ESD protection diodes with VRWM higher than the amplitude of the signal lines to be protected.

Figure 3.1 Reverse breakdown voltage vs signal line voltage
Figure 3.1 Reverse breakdown voltage vs signal line voltage
Figure 3.2 Leakage current of an ESD protection diode
Figure 3.2 Leakage current of an ESD protection diode

3 Key electrical characteristics of TVS diodes (ESD protection diodes)

3 Key electrical characteristics of TVS diodes (ESD protection diodes)
詳細資料
3-1 Key characteristics for normal operation (in the absence of an ESD event)(2)
詳細資料
3-1 Key characteristics for normal operation (in the absence of an ESD event)(3)
詳細資料
3-2 Key characteristics for protection against ESD events(1)
詳細資料
3-2 Key characteristics for protection against ESD events(2)
詳細資料
3-2 Key characteristics for protection against ESD events(3)
詳細資料

Related information

Back to Basics of TVS Diodes (ESD protection diodes)

開啟新視窗