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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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SOI stands for Silicon-On-Insulator.
Typically, pn junction isolation is used to electrically isolate devices on an integrated circuit (IC). In contrast, SOI uses a silicon dioxide (SiO2) layer for isolation between devices. SOI technology makes it possible to prevent malfunction and destruction of an IC caused by vertical and horizontal parasitic devices formed by conventional pn junction isolation.
For High-voltage IPD’s SOI, please refer to "High voltage intelligent power device application note"