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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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What is avalanche capability?
Owing to the stray inductance of the circuit, the surge voltage of the MOSFET is superimposed on the voltage between drain and source at turn-off, and the drain-source voltage may break down if it exceeds the maximum rating of the device.
However, MOSFETs do not break even at voltage exceeding VDSS (rated voltage) when energy and drain current are within certain limits and temperature is under the rated channel temperature Tch. This is called avalanche capability. The allowable energy is called avalanche energy (EAS) and the current is called avalanche current (IAR).
Maximum Ratings: Power MOSFET Application Notes (PDF:1,075KB)