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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Drain current (DC) (silicon limit) indicates the current-carrying capacity of a single silicon unit, without considering the limitations of the package and safe operation area.
The drain current (DC) (silicon limit) does not mean the current that can be actually applied to the product. It indicates the current carrying capacity of the silicon chip and which is used as a reference for comparing with other products. In other words, it indicates the energization capacity when viewed as a single silicon unit without considering the limitations of the package and the safe operation area, etc.
The drain-current (DC) that can be applied to a product is limited by the current carrying capacity of the product's package the maximum-channel temperature and the safe operating area.
Absolute Maximum Ratings (Note) (Ta = 25°C unless otherwise specified)
|Drain current (DC) (Tc = 25 ºC)||ID||150||A|
|Drain current (DC) (Silicon limit)||ID||420||A|
|Drain current (pulsed) (t = 100 µs)||IDP||500||A|
|Power dissipation (Tc = 25 ºC)||PD||210||W|
|Single-pulse avalanche energy||EAS||393||mJ|
|Single-pulse avalanche current||IAS||120||A|
|Storage temperature||Tstg||-55 to 175||°C|
Table 1: Example of absolute maximum ratings
Please also refer to the product page below.