Model-Based Development (MBD) initiatives for automotive semiconductor products

The environment surrounding automotive semiconductors

In recent years, the automotive industry is said to be undergoing a once-in-a-century transformation, with various technology trends gaining attention. Among them, the electrification of automobiles is advancing as a solution to the challenge of carbon neutrality, and many electronic components, including automotive power semiconductors, are being equipped. While there are technology trends that respond to environmental challenges, automation, and enhance convenience and comfort, the systems have become large-scale and complex, posing the challenge of extensive verification to ensure high safety and reliability. Verifying the entire system is becoming difficult with limited resources. If a certain component does not meet the specifications, it can lead to a setback for both the set maker and the component maker, resulting in increased development time and costs. Therefore, the automotive industry as a whole is advancing the adoption of Model Based Development (MBD), an efficient development method utilizing models and simulations.

Overview of Model-Based Design initiatives for automotive semiconductors

Considering our role in realizing MBD, firstly, it is required to provide models that operate in the design environment for our customers, the set makers and unit makers. As a concrete initiative, we provide device models such as SPICE models and thermal analysis models that are compatible with various tools in the customer's design environment. In the system-level upper design stages, automotive semiconductors are often treated as ideal semiconductors, and there is a gap in model granularity between the MBD conducted by upstream set makers and unit makers and the MBD by downstream component makers. For example, in the hard verification stage, cases where heat and noise from power semiconductors handling high voltage and large current affect the system are common and pose a challenge. Therefore, as an initiative to improve this, we propose an analysis method based on our unique degeneration technology that enables thermal design and EMI (Electromagnetic Interference) noise verification for automotive power MOSFETs and ICs.

image: Overview of Model-Based Design initiatives for automotive semiconductors

The overall picture of automotive semiconductor models

The following table shows the automotive semiconductor models available from our company.

Automotive semiconductor model Electric model Thermal analysis model
Tools/Format Pspice® LTspice® SIMetrix™ ELDO®
Xpedition AMS STEP
Distrite semiconductor *2
IC Motor driver
*1 *3
IPD (Intelligent Power Device) *1 *3

Automotive Communication IC

 (CXPI)

*3

◎; Available and now open to the public
〇; Available, lnquiry required

*1; Partialy available
*2; A simplified CFD model for thermal analysis is now available on the web,  and detailed models are available upon inquiry.
*3; detailed models are available upon inquiry.

Toshiba's automotive semiconductor models

1. Discrete semiconductor models

As for the electrical models of automotive discrete semiconductor products, we have prepared two types of SPICE models with different granularities. One is the G0 model, which is suitable for function checks due to its fast calculation speed. The other is our proprietary G2 model (high-precision SPICE model) developed for MOSFET products. The G2 model is created in a macro-model format based on BSIM3, using the least possible number of elements and nonlinear elements with continuous arbitrary functions to represent the electrical characteristics of the target elements. As a result, it has features such as minimizing the increase in node count that leads to convergence issues and slower calculation speeds, which are disadvantages of traditional macro models. Furthermore, it excels in reproducing the high-current region characteristics of the ID-VDS curve and the capacitance characteristics with nonlinearity, enabling highly accurate simulations close to actual measurements. It also considers the parasitic elements of the package, allowing for the analysis of ringing and EMI that occur during switching. Please refer to the application notes below for more detailed information.
Automotive Discrete Semiconductor MBD Introductory (PDF:1.49MB)

The G2 model (high-precision SPICE model) is introduced in the link below.
High accurate SPICE models that can more accurately simulate the transient characteristics of power devices

We provide SPICE models compatible with various simulation tools. Specifically, in addition to the models for PSpice® and LTspice® shown in the table, we have also started web publication of SIMetrix® models and ELDO® models. The various models can be checked from the link below
EDA/CAD Model Library

Details of the simplified CFD model for thermal analysis of discrete semiconductor products are introduced in the link below.
Cooling simulation model: Expanding the number of Simplified CFD Models for three-dimensional thermal fluid analysis in MOSFETs

2. IC Models

Introduction of  Functional Verification, "Thermal Analysis, EMC Analysis, and Control Analysis using models of ICs under development. For inquiries and considerations regarding each analysis model, please contact us at the link at the bottom of the inquiry page.

Functional Verification

Toshiba is focused on developing new IC products for automotive motor systems and automotive communication systems. Figure 1 is an example of a simulation using Xpedition AMS, which combines the model of the H-bridge gate driver IC (TB9103FTG: under development) with power MOSFET (G2) models and mechanical models such as motors. Figure 2 monitors the voltage applied to each MOSFET driven by a control signal that repeatedly reverses and inverts at the IC's input terminals (IN1, IN2). The lower part of Figure 2 shows an enlarged view of the gate voltage (V(GH1)) and source voltage (V(SH1)) of the high-side MOSFET during the dashed period. With this IC model, it is possible to closely observe the operation of the IC and the behavior of the MOSFET during driving.

Figure 1:Functional verification combined with H-bridge gate driver IC, MOSFET, and motor models
Figure 1:Functional verification combined with H-bridge gate driver IC, MOSFET, and motor models
Figure 2:Simulation waveforms
Figure 2:Simulation waveforms

* This model is under development and subject to further improvements and modifications, therefore the configuration and results of the simulation may change.

* To the TB9103FTG news article.

Thermal Analysis

In automotive electronics, the operating environment is becoming increasingly harsh with high-density mounting and high ambient temperatures, leading to various thermal issues due to the impact of electronic components used, their placement, and PCB design. To prevent these issues proactively, it is becoming necessary to perform thermal analysis in the early stages of development. Our company provides detailed models in STEP format for thermal analysis of ICs. Please contact us for the use of models, including products not listed.

Category Product Features Package Thermal model
CXPI TB9032FNG CXPI driver receiver

P-SOP8-0405-1.27-002

STEP formats
Brushed Motor Driver TB9051FTG H-Brigde driver (1ch) P-QFN28-0606-0.65-001
TB9052FNG DC brushed motor GATE-driver (1ch) HTSSOP48-P-300-0.50
TB9053FTG H-Bridge driver (2ch) P-QFN40-0606-0.50
TB9054FTG H-Bridge driver (2ch) P-VQFN40-0606-0.50
TB9056FNG H-Bridge driver with LIN (1ch) SSOP24-P-300-0.65A
TB9057FG DC brushed motor GATE-driver (1ch) LQFP48-P-0707-0.50
TB9058FNG H-Bridge driver with LIN (1ch) SSOP24-P-300-0.65A
Brushless Motor Driver TB9061AFNG 3-phase sensorless motor GATE-driver SSOP24-P-300-0.65A
TB9080FG

3-phase brushless motor GATE-driver

(Built-in control logic that output si sine wave drive)

LQFP64-P-1010-0.50E
TB9081FG 3-phase brushless motor GATE-driver QFP64-P-1010-0.50C
TB9083FTG 3-phase brushless motor GATE-driver P-VQFN48-0707-0.50-005
Stepping Motor Driver TB9120AFTG

2-phase bipolar stepping motor driver

(Excitation mode: up to 1/32)

P-VQFN28-0606-0.65
SmartMCD™ TB9M003FG 3-phase brushless motor GATE-driver P-HTQFP48-0707-0.50-001

* The STEP format is an ISO standard and is compatible with many 3D CAD tools, allowing for use in various fluid analysis tools such as Flotherm™ and Icepak™.

EMC Analysis

With the advancement of autonomous driving and the increased functionality of each system, the amount of information in vehicle communication networks is growing. In such an environment, EMC (Electro Magneticcompatibility) measures to ensure safety and reliability are becoming increasingly essential.  However, designing automotive systems that take into account the effects of mutual interference between devices in the complex electromagnetic environment inside a vehicle is extremely challenging. Our company is working on model development and improvement aimed at realizing front-loading of EMC.

Figure 3:CXPI IC: EMS(DPI) Simulation
Figure 3:CXPI IC: EMS(DPI) Simulation
Figure 4:CXPI IC: EMS(DPI) Evalution Results and simulation Results.
Figure 4:CXPI IC: EMS(DPI) Evalution Results and simulation Results.

Control Analysis

Our company has started mass production and shipping of 'TB9M003FG', the first product in the 'SmartMCD™' series, which incorporates a microcontroller into the gate driver IC. In conjunction with this, we have prepared a HW block set that realizes SmartMCD™ hardware functions on MATLAB®/Simulink®, and a model for speed control utilizing hardware functions (Figure 5). By simulating our control model in combination with a motor model and a load model, you can evaluate system control using SmartMCD™. We are also preparing an automatic generation function for software that can be coupled with hardware-dependent device drivers from the control model. The automatic code generation function allows for easy transition of the evaluated model to actual hardware. Model-based development is realized through control evaluation and calibration with model simulations, and coordination with actual hardware through automatic code generation, reducing the development process.

Figure 5:Cotrol analysis of SmartMCD™
Figure 5:Cotrol analysis of SmartMCD™
Thermal Management for Designs Using Discrete Semiconductor Devices
Design / Development
Cooling simulation model: Expanding the number of Simplified CFD Models for three-dimensional thermal fluid analysis in MOSFETs
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has created the Simplified CFD Model that is suitable for cooling simulations, focusing on MOSFET, and has started releasing this model.
Design / Development
Introducing Accu-ROM™, a thermal and noise simulation technology for automotive power semiconductors for MBD (Model Based Development)
Design / Development
High-precision SPICE models that can more accurately simulate the transient characteristics of power devices
Design / Development

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* SmartMCD™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* PSpice®is a trademark of Cadence Design Systems, Inc.
* LTspice® is a simulation software and tradenark of ADI (Analog Devices、Inc.).
* SIMetrix® is a simulation software and treadmark of SIMetrix Technologies Ltd. .
* Xpedition AMS is a sistemsimulator of Siemens EDA.
* Flotherm™ is a simulation software and tradenark of Simens.
* Icepak™ is a simulation software and tradenark of Ansys, Inc.
* MATLAB®/Simulink® is a simulation software and tradenark of MathWorks, Inc.
* VenetDCP® is a tradenark of Toshiba Digital Solutions Corporation.
* Company names, product names, and service names may be trademarks of their respective companies.