2SC6026MFV

Transistor for low frequency small-signal amplification

  • Related Reference Design(1)

Description

Application Scope General-purpose
Polarity NPN
Complementary Product 2SA2154MFV
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-723 (VESM)
Package Image VESM
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions 보기
Land pattern dimensions 보기
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.15 A
Collector-emitter voltage VCEO 50 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
DC Current Gain hFE (Max) hFE IC=0.002A
VCE=6V
400 -
DC Current Gain hFE (Min) hFE IC=0.002A
VCE=6V
120 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=10mA
IC=0.1A
0.25 V
Transition frequency (Min) fT IC=0.001A
VCE=10V
60 MHz
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Sep,2017

Mar,2019

Sep,2024

Jan,2025

Jan,2025

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note
2SC6026MFV-Y,L3F 8000 Yes - General Use
2SC6026MFVG,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)
2SC6026MFVGR,L3F 8000 Yes - General Use
2SC6026MFVY,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)

(Note):For more information, please contact our sales or use the inquiry form on our website.


Reference Design

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

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Notes

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