2SC6026MFV

不推薦用於新設計

Transistor for low frequency small-signal amplification

  • 相關參考設計(1)

產品概要

Application Scope General-purpose
Polarity NPN
Complementary Product 2SA2154MFV
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-723 (VESM)
Package Image 東芝 2SC6026MFV Transistor for low frequency small-signal amplification產品 VESM 封裝圖片
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Collector Current IC 0.15 A
Collector-emitter voltage VCEO 50 V

電器特性

項目 符號 條件 單位
DC Current Gain hFE (Max) hFE IC=0.002A
VCE=6V
400 -
DC Current Gain hFE (Min) hFE IC=0.002A
VCE=6V
120 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=10mA
IC=0.1A
0.25 V
Transition frequency (Min) fT IC=0.001A
VCE=10V
60 MHz

文檔

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Sep,2017

Mar,2019

*

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

參考設計

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have increasingly replaced conventional Si power devices in power converters, such as industrial motor drives and railway traction inverters, to reduce size and power loss.
This gate driver is designed to drive such modules safely and includes multiple protection functions. It uses the pre-driver coupler TLP5231 together with external buffer MOSFETs, enabling large gate-drive current while providing isolation for high-current/high-voltage SiC MOSFET modules. The design offers a two-channel configuration (high-side and low-side) on a compact 62 mm × 100 mm board that can be integrated into our Dual MOSFET modules.
We also provide key design considerations, usage and adjustment guidance for each circuit block, along with circuit diagrams and PCB pattern information to support your design work. Note: new designs using 2SC6026MFV are Not Recommended for New Design (NRND) as of April 26.

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