2SC6026MFV

Transistor for low frequency small-signal amplification

  • 相關參考設計(1)

數據表

2SC6026MFV 數據表/日文[Mar,2014]PDF: 234KB

數據表

2SC6026MFV 數據表/英文[Mar,2014]PDF: 162KB

Simulation Model

PSpice Model[Sep,2017]ZIP: 2KB

Simulation Model

LTspice Model[Mar,2019]ZIP: 6KB

Reliability Information

Reliability Data[Sep,2024]PDF: 276KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Jan,2025]PDF: 87KB

Environment Information

Certificate on Content of SVHC of REACH[Jan,2025]PDF: 86KB

Application Note

Surface Mount Small Signal Transistor (BJT) Precautions for use[Jan,2022]PDF: 732KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Catalog

Mini catalog Introduction to Toshiba small package Bipolar Transistors[Dec,2024]PDF: 588KB

Catalog

Selection Guide Small Signal 2024 Rev2.0[Jul,2024]PDF: 15538KB

數據表

2SC6026MFV 數據表/日文[Mar,2014]PDF: 234KB

數據表

2SC6026MFV 數據表/英文[Mar,2014]PDF: 162KB

Application Note

Surface Mount Small Signal Transistor (BJT) Precautions for use[Jan,2022]PDF: 732KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Simulation Model

PSpice Model[Sep,2017]ZIP: 2KB

Simulation Model

LTspice Model[Mar,2019]ZIP: 6KB

Reliability Information

Reliability Data[Sep,2024]PDF: 276KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Jan,2025]PDF: 87KB

Environment Information

Certificate on Content of SVHC of REACH[Jan,2025]PDF: 86KB

Catalog

Mini catalog Introduction to Toshiba small package Bipolar Transistors[Dec,2024]PDF: 588KB

Catalog

Selection Guide Small Signal 2024 Rev2.0[Jul,2024]PDF: 15538KB

產品概要

Application Scope General-purpose
Polarity NPN
Complementary Product 2SA2154MFV
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-723 (VESM)
Package Image VESM
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 1.2×1.2×0.5
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 值 單位
Collector Current IC 0.15 A
Collector-emitter voltage VCEO 50 V

電器特性

項目 符號 條件 值 單位
DC Current Gain hFE (Max) hFE IC=0.002A
VCE=6V		 400 -
DC Current Gain hFE (Min) hFE IC=0.002A
VCE=6V		 120 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=10mA
IC=0.1A		 0.25 V
Transition frequency (Min) fT IC=0.001A
VCE=10V		 60 MHz
購買及樣品申請
請聯繫東芝的官方經銷商之一或最近的東芝銷售辦事處
點選以下連結搜索和購買小量樣品

文檔

  • 如果沒看到確認框則對應文件目前無法下載

Sep,2017

Mar,2019

Sep,2024

Jan,2025

Jan,2025

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS AEC-Q100
AEC-Q101		 Note
2SC6026MFV-Y,L3F 8000 Yes - General Use
2SC6026MFVG,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)
2SC6026MFVGR,L3F 8000 Yes - General Use
2SC6026MFVY,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)

(Note)：For more information, please contact our sales or use the inquiry form on our website.


參考設計

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
詳細資料

技術方面問題

聯絡我們

聯絡我們

常見問題

常見問答

Notes

返回列表頁
開啟新視窗