The U-MOSⅨ-H series has a greatly improved figure of merit that represents losses.
The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance. Fabricated with the latest process and the optimized cell structure, the U-MOSⅨ-H series provides greatly improved RDS(ON)×Qg, RDS(ON)×QSW and RDS(ON)×QOSS, which are important figures of merit for MOSFETs.
Consequently, the U-MOSⅨ-H series provides significant reductions in major losses including conduction loss, drive loss, switching loss, and output charge loss, which help improve the efficiency of power supply systems and reduce the MOSFET device temperature.
Qg：Gate charge (figure of merit for drive loss)
QSW：Gate switch charge (figure of merit for switching loss)
QOSS：Output charge (figure of merit for output charge loss)
When the TPH1R306PL of the U-MOSⅨ-H 60V series is compared with a competitor's similar product, the RDS(ON)×QSW related to switching loss is reduced by 25% and the RDS(ON)×QOSS related to output charge loss is reduced by 32%.
Qg：Gate charge (figure of merit for drive loss)
QSW：Gate switch charge (figure of merit for switching loss)
QOSS：Output charge (figure of merit for output charge loss)
When the TPH3R70APL of the U-MOSⅨ-H 100V series is compared with a competitor's similar product, the RDS(ON)×QSW related to switching loss is reduced by 15% and the RDS(ON)×QOSS related to output charge loss is reduced by 14%.
U-MOSⅨ-H Series MOSFETs
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