TPHR8504PL1

Power MOSFET (N-ch single 30V<VDSS≤60V)

  • Related Reference Design(4)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance(N)
Package Image SOP Advance(N)
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.1×1.0
Package Dimensions 보기
Land pattern dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 370 A
Power Dissipation PD 210 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.4 V
Gate threshold voltage (Min) Vth - 1.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 1.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.85
Input capacitance (Typ.) Ciss - 7370 pF
Total gate charge (Typ.) Qg VGS=10V 103 nC
Output charge (Typ.) Qoss - 85.4 nC
Reverse recovery time (Typ.) trr - 58 ns
Reverse recovery charge (Typ.) Qrr - 70 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Nov,2022

Oct,2024

Reference Design

PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
This is a picture of eFuse Application Circuit (with Thermal Shutdown).
eFuse Application Circuit (with Thermal Shutdown)
This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Thermal Shutdown) built on a small board. This circuit provides over temperature detection and protection by combining the eFuse IC and the ThermoflaggerTM (Over Temperature Detection IC).
This is a picture of eFuse Application Circuit (with Enhanced Overcurrent Protection).
eFuse Application Circuit (with Enhanced Overcurrent Protection)
This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Enhanced Overcurrent Protection) built on a small board.
This circuit provides precise overcurrent shutdown by combining the eFuse IC and the ThermoflaggerTM used as an overcurrent detection device.

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Notes

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