TPN4R303NL

Power MOSFET (N-ch single VDSS≤30V)

  • Related Reference Design(1)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
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Land pattern dimensions 보기
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 63 A
Power Dissipation PD 34 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 6.3
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 4.3
Input capacitance (Typ.) Ciss - 1110 pF
Total gate charge (Typ.) Qg VGS=10V 14.8 nC
Purchase and Sample
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You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Jul,2014

Feb,2019

Nov,2022

Sep,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN4R303NL,L1Q 5000 Yes

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Notes

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