MG800FXF1ZMS3

SiC MOSFET Modules

Description

Feature SiC MOSFET + SiC SBD type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration Hgh side chopper
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name iXPLV
Package Image iXPLV
Mounting Surface Mount
Width×Length×Height
(mm)
144×99.5×40
Package Dimensions 보기

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 230 mJ
Turn-off switching loss (Typ.) Eoff - 230 mJ
Reverse recovery loss (Typ.) Err - 10 mJ
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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