MG800FXF1ZMS3

SiC MOSFET Modules

Description

Feature SiC MOSFET + SiC SBD type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration Hgh side chopper
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name iXPLV
Mounting Surface Mount

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 230 mJ
Turn-off switching loss (Typ.) Eoff - 230 mJ
Reverse recovery loss (Typ.) Err - 10 mJ
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

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Frequently Asked Questions

FAQs

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