MG800FXF1ZMS3

SiC MOSFET Modules

產品概要

Feature SiC MOSFET + SiC SBD type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration Hgh side chopper
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name iXPLV
Package Image 東芝 MG800FXF1ZMS3 SiC MOSFET Modules產品 iXPLV 封裝圖片
Mounting Surface Mount
Width×Length×Height
(mm)
144×99.5×40
Package Dimensions 檢視
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*1 *2

Download from SamacSys
*1 *2

 Please refer to the link destination to check the detailed size.

*1

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

電器特性

項目 符號 條件 單位
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 230 mJ
Turn-off switching loss (Typ.) Eoff - 230 mJ
Reverse recovery loss (Typ.) Err - 10 mJ
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