Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.