SiC MOSFET Modules

Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT)　which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.

Technical Articles

MG800FXF2YMS3(3300 V/800 A 2in1)

The new product uses highly mounting compatible package named iXPLV (intelligent fleXible Package Low Voltage) to meet the needs for high-efficiency, compact equipment for industrial applications such as inverters and converters for railway vehicles, and renewable energy power generation systems.

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MG250YD2YMS3(2200 V/250 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as photovoltaic power systems and energy storage systems.

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MG400V2YMS3(1700 V/400 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

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MG600Q2YMS3(1200 V/600 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for industrial equipment, and renewable energy power generation systems.

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MOSFETs / SiC MOSFET Modules

Features of SiC MOSFET Modules
Our SiC MOSFET modules achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage. In addition, the high heat tolerance and low inductance package brings out the performance of SiC sufficiently.

MOSFETs / SiC MOSFET Modules

Features of Toshiba SiC MOSFET Modules
Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system.

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應用

Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
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參考設計

E3D SiC MOSFET Module Gate Driver
A gate driver for SiC MOSFET modules used in industrial and railway inverter/converter applications. Compatible with Toshiba's E3D-package SiC MOSFET modules, including the MG250YD2YMS3. Design resources such as schematics, BOMs, PCB layouts, together with guidance on design considerations, operation, and circuit tuning, help accelerate the development of SiC module gate drivers.
詳細資料
iXPLV® SiC MOSFET Module Gate Driver
A gate driver for SiC MOSFET modules used in industrial and railway inverter/converter applications. Compatible with Toshiba's iXPLV-package SiC MOSFET modules, including the MG800FXF2YMS3. Design resources such as schematics, BOMs, PCB layouts, together with guidance on design considerations, operation, and circuit tuning, help accelerate the development of SiC module gate drivers.
詳細資料
This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
近年來， SiC MOSFET模組比傳統的IGBT模組尺寸更小、損耗更低，因此越來越受歡迎，在工業馬達驅動、鐵路逆變器等功率轉換應用中非常有用。這是一款具有各種保護功能的閘極驅動電路，可安全地驅動SiC MOSFET模組。 該設計採用TLP5231預驅動光耦，該元件能夠透過外部緩衝MOSFET實現大電流閘極驅動，並內建多種保護功能，可實現大電流／高壓SiC MOSFET模組的隔離閘極驅動。它由62mm×100mm板上的高壓側和低壓側兩個通道組成，可安裝在東芝雙MOSFET模組上。 提供有關電路各部分的設計技巧、操作方法以及電路圖和PCB 圖案等設計資訊，請將其用於您的設計。 請注意：自2026年4月起，2SC6026MFV 已被列為「不建議用於新設計（NRND）」產品。
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