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New Products / News
SiC MOSFET Modules
Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT) which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.
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MG800FXF2YMS3(3300 V/800 A 2in1)
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MG600Q2YMS3(1200 V/600 A 2in1)
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for industrial equipment, and renewable energy power generation systems.
MG400V2YMS3(1700 V/400 A 2in1)
The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
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Through this website you are able to proceed to the website of our distributors ("Third Party Website") which is not under the control of Toshiba Corporation and its subsidiaries and affiliates (collectively "Toshiba"). The Third Party Website is made available to you as a convenience only and you agree to use the Third Party Website at your own risk. The link of the Third Party Website does not necessarily imply a recommendation or an endorsement by Toshiba of the Third Party Website. Please be aware that Toshiba is not responsible for any transaction done through the Third Party Website, and such transactions shall be subject to terms and conditions which may be provided in the Third Party Website.
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