TK25V60X

Power MOSFET (N-ch 500V<VDSS≤700V)

  • Related Reference Design(1)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅣ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name DFN 8×8
Package Image DFN 8×8
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
8.0×8.0×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 600 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 25 A
Power Dissipation PD 180 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 135
Input capacitance (Typ.) Ciss - 2400 pF
Total gate charge (Typ.) Qg VGS=10V 40 nC
Reverse recovery time (Typ.) trr - 400 ns
Reverse recovery charge (Typ.) Qrr - 3300 nC
Purchase and Sample
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You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Jul,2020

Mar,2021

Aug,2023

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK25V60X,LQ 2500 Yes

Reference Design

Device and prastic inductance of PCB trace of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.
MOSFET4 Leads Package DFN8x8(TK25V60X) Application Circuit
This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (DFN8x8) which reduces package inductance.

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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