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Bipolar Transistors/IGBTs/IEGTs

Introduction

Bipolar Transistors/IGBTs/IEGT

Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices.

An injection-enhanced gate transistor (IEGT) is a voltage-driven device for switching large current. IEGTs are ideal for industrial motor control applications that support today’s social infrastructure, including industrial drive systems and power converters.

Lineups

Bias Resistor Built-in Transistors (BRT)

IGBTs


IEGTs
(PPI & PMI)

Bipolar
Transistors

Multi-Chip Discrete Devices

Junction FETs


RF Bipolar
Transistors

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.