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SiC 쇼트키 베리어 다이오드

SiCショットキバリアダイオード

Toshiba offers a wide range of 2nd Gen.650-V silicon carbide Schottky barrier diodes (SiC SBDs) with a rated current of 2 A to 10 A, in through-hole (TO-220) packages.
The 2nd Gen.SiC SBD series provides a 30% lower figure of merit (VF*QC)*1 and a higher surge peak forward current (IFSM) than the 1st Gen.SiC SBD series and therefore helps improve the efficiency and reduce the size of power supplies.

Lineups

Voltage

Packaging

Introduction

  • High surge peak forward current (IFSM):  Approx. 7 to 9 times the current rating, IF(DC)
  • Low figure of merit (VF*QC)*1:  Provides approx. 30% lower figure of merit than that of the Gen-1 SiC SBD series and therefore provides higher efficiency
  • Wide range of packaging options including insulated and surface-mount packages:  Addresses diverse design requirements

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Purpose

SiC SBDs are suitable for power factor correction (PFC) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.

  • Consumer electronics and office equipment: 4K LCD TVs, projectors, multifunction copiers, etc.
  • Industrial equipment: Communication base stations, PC servers, etc.
  • AC-DC Power Supplies
  • DC-DC Power Supplies

*1  VF・QC  : The product of forward voltage and total charge (VF*QC) indicates the loss performance of SiC Schottky barrier diodes. When devices with the same current rating are compared, a device with a lower VF*QC provides a lower loss.

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