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SiC 쇼트키 베리어 다이오드

NEW! Second generation 650V SiC SBDs (silicon carbide schottky barrier diodes)

The new second generation 650V SiC SBDs, improved with both surge forward current (IFSM) and Figure of Merit (VF・Qc [Note 1]), realizes higher power supply efficiency.


  • High surge forward current (IFSM): Approximately 7 to 9 times of current rating IF(DC)
  • Figure of Merit  (VF・Qc[Note 1]): Approximately 30% reduction compared to the 1st generation devices, realizing higher efficiency
  • Various package lineup including isolated type and surface mount type: suit various design requirements


Power factor correction (PFC) for high efficiency power supply, Chopper circuit, and free wheel diode for switching element

  • Commercial use/OA equipment: 4K Liquid Crystal Display, projector, multifunction printer
  • Industrial use: telecommunications base stations, PC servers


New second generation 650V SBDs Line-up / Characteristics

Package Characteristics
Absolute Maximum Ratings Electrical Characteristics
Forward DC Current
Non-repetitive Peak Forward Surge Current
Total Power Dissipation
Forward Voltage
Junction Capacitance
Total Capacitive Charge
Symbol IF(DC) IFSM Ptot VF VF・QC Cj QC
Value Max Max Max Typ.
Typ. Typ. Typ.
Unit (A) (A) (W) (V) (V・nC) (pF) (nC)

Test Conditions/

Part Number
- @ Half-sine Wave
t=10 ms
- @IF(DC) - @VR=1 V @VR=400 V
TRS2E65F 2 21 41.6 1.45
85 5.8
TRS3E65F 3 27 48.3 11.7
120 8.1
TRS4E65F 4 39 55.6 15.1
165 10.4
TRS6E65F 6 55 68.2 21.9
230 15.1
TRS8E65F 8 69 83.3 28.6
TRS10E65F 10 83 107 35.4
TRS4A65F 4 37 33.6 1.45
165 10.4
TRS6A65F 6 52 35.4 21.9
TRS8A65F 8 65 37.5 28.6
TRS10A65F 10 79 39.7 35.4
TRS2P65F 2 19 34.0 1.45
85 5.8
TRS3P65F 3 26 37.5 11.7
120 8.1
TRS4P65F 4 33 41.0 15.1
165 10.4
TRS6P65F 6 45 48.3 21.9
230 15.1
TRS8P65F 8 58 55.5 28.6
300 19.7
TRS10P65F 10 70 62.5 35.4
400 24.4

[Notes 1] QC :electric charge amount of capacitance Cj between 0.1 V and 400 V

SiC Schottky barrier diodes help reduce the energy consumption and improve the power efficiency of power-hungry equipment.

Due to a major shift in customer focus to environmentally friendly, clean energy sources, market demand is increasing for power devices that will make it possible to achieve low-loss and high-efficiency power conversion. Silicon carbide (SiC), a wide-gap semiconductor, is expected to be a material for the next-generation high-voltage, low-loss power devices because its critical breakdown field is more than eight times that of silicon (Si).
While Si SBDs are available with a VRRM of only up to 200 V, Toshiba's new SiC-based Schottky barrier diodes (SBDs) provide higher reverse voltage (VRRM) because of low leakage current in the high-temperature region. SiC Schottky Barrier Diodes are ideal for power conversion applications such as server power supplies and solar power conditioners. At high voltage and high current, the operation of SiC Schottky Barrier Diodes is more stable than that of the conventional Si SBDs. Therefore, SiC Schottky Barrier Diodes help to significantly reduce the loss of power through heat.

● Physical property comparisons between Si and SiC

● Physical property comparisons between Si and SiC
Characteristic Si SiC(4H)
Band gap 1.12 eV 3.26 eV
Electron mobility μ 1400 cm2/Vs 1000 cm2/Vs
Relative dielectric constant ε 11.8 9.7
Critical breakdown field E 0.3 MV/cm 2.5 MV/cm
Transistor performance limit
Ron・A (@600 V)
70 mΩ・cm2 0.14 mΩ・cm2
Features Easily available
Easy to process
Easy to reduce on-resistance
Low leakage current at high temperatures
Easy to create designs with high
withstand voltage

Characteristics of SiC Schottky Barrier Diodes

Majority carrier device with a Schottky barrier structure

SiC Schottky Barrier Diodes are majority carrier devices and have the same structure as Si SBDs. Fabricated with a wide-gap semiconductor, SiC Schottky Barrier Diodes exhibit low leakage current even in the high-temperature region, making it possible to maintain stable operation at high voltage and high current. Toshiba's SiC Schottky Barrier Diodes have a Junction Barrier Schottky (JBS) structure to further reduce leakage current.

JBS Structure

High-speed switching

Theoretically, SiC Schottky Barrier Diodes provide zero reverse recovery time, trr, because of the Schottky structure and majority carrier operation. In practice, however, SiC Schottky Barrier Diodes also have a reverse recovery region. Its reverse recovery time, trr, is as short as 20 ns (at Ta = 25°C), compared with Si high-efficiency diodes (HEDs) with a trr of 40 ns.

Comparison of Reverse Recovery Time, trr, Between a SiC Schottky Barrier Diode and a Si HED Diode (Tj = 150˚C)

Recovery characteristics independent of temperature

Because SiC Schottky Barrier Diodes are majority carrier devices, their electrical performance is theoretically independent of temperature. Thus, SiC Schottky Barrier Diodes exhibit excellent performance even in the high-temperature region.

Reverse Recovery Time (trr)/Reverse Recovery Current (Irr) vs. Temperature

Lower total loss than Si HEDs (as tested by Toshiba)

SiC Schottky Barrier Diodes offer low total loss, which consists of conduction loss and switching loss. Therefore, SiC Schottky Barrier Diodes can switch at high frequencies, making it possible to reduce the size of power supplies.

Total Loss vs. Frequency

* HED: High-Efficiency Diodes

Toshiba's Schottky Barrier Diodes

Feature 1 Outstanding VF-IR trade-offs at high temperatures

There is a trade-off between the forward voltage (VF) and reverse current (IR) of an SiC Schottky Barrier Diode. Toshiba is endeavoring to improve the VF-IR trade-off by optimizing the device structure. Our SiC Schottky Barrier Diodes exhibit low loss even in the high-temperature region and thus help reduce power loss.

Feature 2 Low VF temperature coefficient

Toshiba's SiC Schottky Barrier Diodes have low dependence on forward voltage, VF, making it possible to reduce conduction loss in the high-temperature region.

Forward Voltage (VF) vs. Temperature


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