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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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재고 확인 및 구매

What are super junction MOSFETs (SJ-MOSs)?

super junction MOSFETs (SJ-MOSs)
  1. SJ-MOS has pillar-shaped P layer (P pillar layer) in N layer. P and N layers are aligned alternately.
  2. Depletion layer spreads in N- layer by applying VDS, but the way it spreads in SJ-MOS is different from that in general D-MOS. (See electric field intensity figures. Electric field intensity indicates the status of depletion layer.)
  3. In the case of D-MOS the electric field intensity is the strongest at P/N- layer interface. When the electric field intensity exceeds the limit of silicon, break-over phenomenon (breakdown phenomenon) occurs, and this is the voltage limit. On the other hand, in the case of SJ-MOS, the electric field intensity is uniform in N- layer.
  4. As a result, SJ-MOS can be designed with N- layer that has lower resistance, realizing low-ON-resistance products.
    SJ-MOS can realize the same ON resistance as that of D-MOS but with smaller chip size than D-MOS.