Small-signal MOSFET 2 in 1
Application Scope | Power Management Switches |
---|---|
Polarity | N-ch×2 |
Generation | U-MOSⅧ-H |
Internal Connection | Independent |
Component Product (Q1) | SSM6N815R |
Component Product (Q2) | SSM6N815R |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | TSOP6F |
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Package Image | |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.9×2.8×0.8 |
Package Dimensions | 보기 |
Land pattern dimensions | 보기 |
CAD data (Symbol, Footprint and 3D model) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | 100 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-20 | V |
Drain current (Q1/Q2) | ID | 2.0 | A |
Power Dissipation | PD | 1.4 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 180 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 142 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=10V | 103 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 290 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4.5V | 3.1 | nC |