TW045N120C

Power SiC MOSFETs

  • Related Reference Design(1)

Description

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
15.94×20.95×5.02
Package Dimensions 보기

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 1200 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 40 A
Power Dissipation PD 182 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 45
Input capacitance (Typ.) Ciss - 1969 pF
Total gate charge (Typ.) Qg - 57 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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May,2023

Apr,2023

Apr,2023

Nov,2024

Oct,2023

Dec,2023

Dec,2024

Dec,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

(Note3)

PLECS ® is a registered trademark of Plexim, Inc.

Reference Design

3-Phase Inverter Using SiC MOSFET
This reference design provides design guide, data and other contents of the 3-phase inverter using 1200 V SiC MOSFET. It drives AC 440V motors.

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Notes

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