TW045N120C

Power SiC MOSFETs

  • 相關參考設計(1)

數據表

TW045N120C 數據表/日文[Sep,2024]PDF: 630KB

數據表

TW045N120C 數據表/英文[Sep,2024]PDF: 518KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Dec,2023]PDF: 172KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 86KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

數據表

TW045N120C 數據表/日文[Sep,2024]PDF: 630KB

數據表

TW045N120C 數據表/英文[Sep,2024]PDF: 518KB

Application Note

Features of third generation SiC MOSFET[Jun,2023]PDF: 1316KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

FAQ: SiC MOSFET Application Notes[Mar,2021]PDF: 801KB

Application Note

Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes[Aug,2020]PDF: 907KB

Application Note

Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes[Aug,2020]PDF: 792KB

Simulation Model

PSpice Model[May,2023]ZIP: 44KB

Simulation Model

LTspice Model[Apr,2023]ZIP: 50KB

Simulation Model

SIMetrix Model[Apr,2023]ZIP: 10KB

Simulation Model

PLECS Model[Nov,2024]ZIP: 6KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Dec,2023]PDF: 172KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Dec,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Dec,2024]PDF: 86KB

Catalog

Selection Guide MOSFETs 2024 Rev2.0[Jul,2024]PDF: 10837KB

產品概要

Application Scope Switching regulators
Polarity N-ch
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS 1200 V
Gate-Source voltage VGSS +25/-10 V
Drain current ID 40 A
Power Dissipation PD 182 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - 5.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=18V 45 mΩ
Input capacitance (Typ.) Ciss - 1969 pF
Total gate charge (Typ.) Qg - 57 nC
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文檔

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May,2023

Apr,2023

Apr,2023

Nov,2024

Oct,2023

Dec,2023

Dec,2024

Dec,2024

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

(Note3)

PLECS ® is a registered trademark of Plexim, Inc.

參考設計

3-Phase Inverter Using SiC MOSFET
This reference design provides design guide, data and other contents of the 3-phase inverter using 1200 V SiC MOSFET. It drives AC 440V motors.
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