TPN8R408QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS 20 V
Drain current ID 32 A
Power Dissipation PD 100 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 12.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 8.4
Input capacitance (Typ.) Ciss - 1750 pF
Total gate charge (Typ.) Qg VGS=10V 28 nC

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