TK210V65Z

Power MOSFET (N-ch 500V<VDSS≤700V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name DFN 8×8
Package Image DFN 8×8
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
8.0×8.0×0.85
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 15 A
Power Dissipation PD 130 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 210
Input capacitance (Typ.) Ciss - 1370 pF
Total gate charge (Typ.) Qg VGS=10V 25 nC
Reverse recovery time (Typ.) trr - 270 ns
Reverse recovery charge (Typ.) Qrr - 3000 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Feb,2023

Feb,2023

Apr,2023

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TK210V65Z,LQ 2500 Yes

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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