Comparison of Transistors by Structure
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| Structure of transistors | Bipolar Transistor (BJT) | MOSFET | IGBT |
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 |
 |
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| Gate (base) driving method |
Current driving (Low input impedance) |
Voltage driving (High input impedance) |
Voltage driving (High input impedance) |
| Gate (base) driving circuit |
Complicated (High part counts) |
Simple | Simple |
| Forward characteristic |
Low VCE(sat) | High ON voltage (High current region) No threshold voltage |
Low VCE(sat) With threshold voltage |
| Switching speed | Low speed (with carrier accumulation effect) |
Ultra high speed (Unipolar operation) |
High speed (Middle of MOSFET and BJT) |
| FWD (Include body diode) |
No | Yes (Body diode) | No(Yes in RC structure) |
| Safe operating area | Narrow | Wide | Middle |
Chapter III : Transistors
Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode
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