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3-22. Comparison of Transistors by Structure
Download "Chapter III : Transistors" (PDF:2.0MB)
| Structure of transistors | Bipolar Transistor (BJT) | MOSFET | IGBT |
 |
 |
 |
|
| Gate (base) driving method |
Current driving (Low input impedance) |
Voltage driving (High input impedance) |
Voltage driving (High input impedance) |
| Gate (base) driving circuit |
Complicated (High part counts) |
Simple | Simple |
| Forward characteristic |
Low VCE(sat) | High ON voltage (High current region) No threshold voltage |
Low VCE(sat) With threshold voltage |
| Switching speed | Low speed (with carrier accumulation effect) |
Ultra high speed (Unipolar operation) |
High speed (Middle of MOSFET and BJT) |
| FWD (Include body diode) |
No | Yes (Body diode) | No(Yes in RC structure) |
| Safe operating area | Narrow | Wide | Middle |
Chapter III : Transistors
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