Comparison of Transistors by Structure

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Structure of transistors Bipolar Transistor (BJT) MOSFET IGBT


Gate (base)
driving method		 Current driving
(Low input impedance)		 Voltage driving
(High input impedance)		 Voltage driving
(High input impedance)
Gate (base)
driving circuit		 Complicated
(High part counts)		 Simple Simple
Forward
characteristic		 Low VCE(sat) High ON voltage
(High current region)
No threshold voltage		 Low VCE(sat)
With threshold voltage
Switching speed Low speed
(with carrier accumulation effect)		 Ultra high speed
(Unipolar operation)		 High speed
(Middle of MOSFET and BJT)
FWD
(Include body diode)		 No Yes (Body diode) No(Yes in RC structure)
Safe operating area Narrow Wide Middle

Chapter III : Transistors

Types of Transistors
詳細資料
Bipolar Transistors (BJTs)
詳細資料
Bias Resistor Built-in Transistors (BRTs)
詳細資料
Junction Field-Effect Transistors (JFETs)
詳細資料
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
詳細資料
Differences between BJT and MOSFET
詳細資料
Structure and Operation of MOSFET
詳細資料
MOSFET Performance Improvement: Decision Factors of RDS(ON)
詳細資料
MOSFET Performance Improvement: Approach to Low RDS(ON)
詳細資料
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
詳細資料
Summary of MOSFET Features by Structure
詳細資料
Performance of MOSFETs: Drain Current and Power Dissipation
詳細資料
Performance of MOSFETs: Avalanche Capability
詳細資料
Performance of MOSFETs: Characteristic of Capacitance
詳細資料
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
詳細資料
Insulated-Gate Bipolar Transistors (IGBTs)
詳細資料
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
詳細資料
Performance Improvement of IGBTs: Evolution of Vertical Design
詳細資料
What are RC-IGBTs and IEGTs?
詳細資料
Application of IGBTs
詳細資料
Comparison of Forward Characteristics of IGBTs and MOSFETs
詳細資料
Datasheets of MOSFET: Maximum Ratings
詳細資料
Datasheets of MOSFET: Electrical Characteristics
詳細資料
Datasheets of MOSFET: Capacitance and Switching Characteristics
詳細資料
Datasheets of MOSFET: Body Diode
詳細資料

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