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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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재고 확인 및 구매

Datasheets of MOSFET: Maximum Ratings

<Absolute maximum ratings>

  • Drain-source voltage (VDSS)
    Maximum voltage of drain to source that can be applied
  • Gate-source voltage(VGSS)
    Maximum voltage of drain to source that can be applied
    Circuit must be designed not to exceed this voltage including surge voltage.
  • Drain current (ID)
    Maximum drain current
  • Drain current (pulsed) (IDP)
    Maximum pulsed drain current
    Normally, pulse width is described in safe operating area.
  • Power dissipation (PD)
    Power loss allowed to generate in the device
    Allowable thermal capability at Tc=25℃.
  • Avalanche energy, single-pulse and continuous (EAS)
    Maximum allowed energy under designated condition
  • Avalanche current (IAR)
    Maximum current at avalanche operation
  • Channel temperature (Tch)
    Maximum channel temperature at which the device can operate
  • Storage temperature (Ttsg)
    Temperature range for storage without operating the MOSFET
Absolute maximum ratings

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25℃(initial), L = 4.36 mH, RG = 25 Ω, IAR = 3.0 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode

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