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3-23. Datasheets of MOSFET: Maximum Ratings
Download "Chapter III : Transistors" (PDF:2.0MB)
＜Absolute maximum ratings＞
- Drain-source voltage (VDSS)
Maximum voltage of drain to source that can be applied - Gate-source voltage(VGSS)
Maximum voltage of drain to source that can be applied
Circuit must be designed not to exceed this voltage including surge voltage. - Drain current (ID)
Maximum drain current - Drain current (pulsed) (IDP)
Maximum pulsed drain current
Normally, pulse width is described in safe operating area. - Power dissipation (PD)
Power loss allowed to generate in the device
Allowable thermal capability at Tc=25℃. - Avalanche energy, single-pulse and continuous (EAS)
Maximum allowed energy under designated condition - Avalanche current (IAR)
Maximum current at avalanche operation - Channel temperature (Tch)
Maximum channel temperature at which the device can operate - Storage temperature (Ttsg)
Temperature range for storage without operating the MOSFET
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25℃(initial), L = 4.36 mH, RG = 25 Ω, IAR = 3.0 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
Chapter III : Transistors
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