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Chapter III : Transistors : Datasheets of MOSFET: Maximum Ratings

<Absolute maximum ratings>

  • Drain-source voltage (VDSS)
    Maximum voltage of drain to source that can be applied
  • Gate-source voltage(VGSS)
    Maximum voltage of drain to source that can be applied
    Circuit must be designed not to exceed this voltage including surge voltage.
  • Drain current (ID)
    Maximum drain current
  • Drain current (pulsed) (IDP)
    Maximum pulsed drain current
    Normally, pulse width is described in safe operating area.
  • Power dissipation (PD)
    Power loss allowed to generate in the device
    Allowable thermal capability at Tc=25℃.
  • Avalanche energy, single-pulse and continuous (EAS)
    Maximum allowed energy under designated condition
  • Avalanche current (IAR)
    Maximum current at avalanche operation
  • Channel temperature (Tch)
    Maximum channel temperature at which the device can operate
  • Storage temperature (Ttsg)
    Temperature range for storage without operating the MOSFET
Absolute maximum ratings

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25℃(initial), L = 4.36 mH, RG = 25 Ω, IAR = 3.0 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

Chapter III : Transistors

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