Datasheets of MOSFET: Maximum Ratings
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＜Absolute maximum ratings＞
- Drain-source voltage (VDSS)
Maximum voltage of drain to source that can be applied - Gate-source voltage(VGSS)
Maximum voltage of drain to source that can be applied
Circuit must be designed not to exceed this voltage including surge voltage. - Drain current (ID)
Maximum drain current - Drain current (pulsed) (IDP)
Maximum pulsed drain current
Normally, pulse width is described in safe operating area. - Power dissipation (PD)
Power loss allowed to generate in the device
Allowable thermal capability at Tc=25℃. - Avalanche energy, single-pulse and continuous (EAS)
Maximum allowed energy under designated condition - Avalanche current (IAR)
Maximum current at avalanche operation - Channel temperature (Tch)
Maximum channel temperature at which the device can operate - Storage temperature (Ttsg)
Temperature range for storage without operating the MOSFET
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25℃(initial), L = 4.36 mH, RG = 25 Ω, IAR = 3.0 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
Chapter III : Transistors
Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode
Related information
- Products
- Application Notes
- FAQ
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