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MOSFET Performance Improvement: Decision Factors of R_DS(ON)

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(1) The MOSFET device structure is selected according to the required voltage rating(V_DSS). For example, many middle and high voltage MOSFETs (V_DSS=250V or higher) have planar gate MOS(π-MOS) structure, and products with less than V_DSS=200V have more trench gate MOS(U-MOS).
(2) The factor that determine the on-resistance R_DS(ON) are shown in Fig.3-7 and Equation 3-(1).　Depending on the structure and V_DSS of MOSFET, the ratio of factors determining R_DS(ON) will change. When the π-MOS structure is chosen, R_drift becomes the dominant factor in V_DSS=600V products, while the ratio of R_ch+R_J-FET is high in V_DSS=30V products. However by applying U-MOS structure, R_ch will be very small.

Fig. 3-7(a) ON resistance decision factors of D-MOS

R_DS(ON)=R_sub+R_drift+R_J-FET+R_ch+R_N+ --- Equ.3-(1)a

Fig. 3-7(b) ON resistance decision factors of trench MOS

R_DS(ON)= R_sub+R_drift+R_ch+R_N+ --- Equ.3-(1)b

@ V_DSS=600 V : R_drift >> R_ch > R_J-FET , R_N+ , R_sub → R_DS(ON) depends on R_drift
@ V_DSS= 30V : ●π-MOS --- R_ch + R_J-FET > R_drift >> R_N+ , R_sub. 　　●U-MOS --- R_ch≈ R_drift >> R_sub, R_N+