TPH2R408QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

  • Related Reference Design(3)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP Advance
Package Image SOP Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
5.0×6.0×0.95
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS 20 V
Drain current ID 120 A
Power Dissipation PD 210 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 3.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.43
Input capacitance (Typ.) Ciss - 5870 pF
Total gate charge (Typ.) Qg VGS=10V 87 nC
Output charge (Typ.) Qoss - 90 nC
Reverse recovery time (Typ.) trr - 57 ns
Reverse recovery charge (Typ.) Qrr - 74 nC
Purchase and Sample
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Jun,2021

Jul,2021

Sep,2022

Oct,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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