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MOSFET Product lineup

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중고 내압 MOSFET 최신 제품 소개

The 400-V to 900-V MOSFETs are used for switching power supply and inverter motor applications. Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.

특징

N-ch Super Junction

개발 로드맵

어플리케이션

N-ch D-MOS

4세대 600V 초접합(Super-Junction) MOSFET DTMOSⅣ 시리즈

DTMOS  series

DTMOS is a super-junction MOSFET series suitable for quick charger,large scale power supply for industry, and other high-output power supply applications. A super-junction MOSFET provides lower on-resistance than a MOSFET in the same package of the π-MOS series. In other words, a super-junction MOSFET with the same on-resistance as for a MOSFET of the π-MOS series is available in a smaller package. Therefore, DTMOS is well suited to reducing the size and improving the efficiency of power supplies.

π-MOS  series

π-MOS is a D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications, including 65-W or lower-wattage notebook PC and game console adapters. Since the switching speed of the π-MOS series is not so fast, it does not generate large EMI noise and is therefore easy to use.

Power Supply for Consumer Appliances

도시바는 4세대 600V 초접합(Super-Junction) MOSFET DTMOSⅣ 시리즈를 개발했습니다. 최신 싱글 에피 텍셜 공정 적용을 통해 기존 제품 (DTMOSⅢ) 대비 성능 지수 Ron · A에서 30% 감소 및 큰폭의 성능 향상을 실현하고 있습니다. Ron · A의 개선은 낮은 온 저항 칩을 보다 많은 패키지에 탑재 가능케 하여 전력 효율 개선을 실현 함과 동시에 소형화에 크게 기여합니다.

1. 성능 지수 Ron・A는 기존 제품 (DTMOSⅢ) 대비 30% 감소

2. 싱글 에피 텍셜 공정에 의해 고온일 때 온 저항 상승이 적음

3. Coss의 감소로 인하여 Eoss (스위칭 손실)은 기존 제품 (DTMOSⅢ) 대비 12 % 감소

  • DTMOS Ⅳ: Eoss 특성
  • 동일 Ron 제품에 의한 효율 비교

4. 폭넓은 온 저항 (R DS(ON) max) 라인업 : 0.9 Ω – 0.018 Ω

Whitepaper

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 10/2017

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Describes the features of the new package and an operation analysis using simulation 9/2017

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Application note

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Catalog

Catalog
Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 3/2016

5. 다양한 패키지 라인업


제품 라인업

1) DTMOSⅣ(V DSS = 600 V) 제품 라인업

2) DTMOSⅣ(VDSS = 600 V) 고속 스위칭 타입 제품 라인업

4) DTMOSⅣ(VDSS = 650 V) 제품 라인업

3) DTMOSⅣ(VDSS = 600 V) 고속 다이오드 내장품 제품 라인업

5) DTMOSⅣ(VDSS = 650 V) 고속 다이오드 내장품 제품 라인업

Product List

MOSFET 제품 라인업
모든 MOSFET 제품을 특성별로 검색 할 수 있습니다.

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