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MOSFET Product lineup

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중고 내압 MOSFET 최신 제품 소개

The 400-V to 900-V MOSFETs are used for switching power supply and inverter motor applications. Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.


N-ch Super Junction

개발 로드맵


N-ch D-MOS

4세대 600V 초접합(Super-Junction) MOSFET DTMOSⅣ 시리즈

DTMOS  series

DTMOS is a super-junction MOSFET series suitable for quick charger,large scale power supply for industry, and other high-output power supply applications. A super-junction MOSFET provides lower on-resistance than a MOSFET in the same package of the π-MOS series. In other words, a super-junction MOSFET with the same on-resistance as for a MOSFET of the π-MOS series is available in a smaller package. Therefore, DTMOS is well suited to reducing the size and improving the efficiency of power supplies.

π-MOS  series

π-MOS is a D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications, including 65-W or lower-wattage notebook PC and game console adapters. Since the switching speed of the π-MOS series is not so fast, it does not generate large EMI noise and is therefore easy to use.

Power Supply for Consumer Appliances

도시바는 4세대 600V 초접합(Super-Junction) MOSFET DTMOSⅣ 시리즈를 개발했습니다. 최신 싱글 에피 텍셜 공정 적용을 통해 기존 제품 (DTMOSⅢ) 대비 성능 지수 Ron · A에서 30% 감소 및 큰폭의 성능 향상을 실현하고 있습니다. Ron · A의 개선은 낮은 온 저항 칩을 보다 많은 패키지에 탑재 가능케 하여 전력 효율 개선을 실현 함과 동시에 소형화에 크게 기여합니다.

1. 성능 지수 Ron・A는 기존 제품 (DTMOSⅢ) 대비 30% 감소

2. 싱글 에피 텍셜 공정에 의해 고온일 때 온 저항 상승이 적음

3. Coss의 감소로 인하여 Eoss (스위칭 손실)은 기존 제품 (DTMOSⅢ) 대비 12 % 감소

  • DTMOS Ⅳ: Eoss 특성
  • 동일 Ron 제품에 의한 효율 비교

4. 폭넓은 온 저항 (R DS(ON) max) 라인업 : 0.9 Ω – 0.018 Ω


Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products

user registration

Optimising power deisng through MOSFET efficiency and intergration 8/2017

user registration

Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 10/2017

user registration

Describes the features of the new package and an operation analysis using simulation 9/2017

user registration

Application note

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

user registration

Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

user registration

Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

user registration

Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016


Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 3/2016

5. 다양한 패키지 라인업

제품 라인업

1) DTMOSⅣ(V DSS = 600 V) 제품 라인업

2) DTMOSⅣ(VDSS = 600 V) 고속 스위칭 타입 제품 라인업

4) DTMOSⅣ(VDSS = 650 V) 제품 라인업

3) DTMOSⅣ(VDSS = 600 V) 고속 다이오드 내장품 제품 라인업

5) DTMOSⅣ(VDSS = 650 V) 고속 다이오드 내장품 제품 라인업

Product List

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