This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
3글자 이상 입력하세요.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
3글자 이상 입력하세요.
A reverse-conducting IGBT (RC-IGBT) integrates an IGBT and a freewheeling diode (FWD) on a single chip. In many IGBT applications, there is a mode in which freewheeling current flows from the emitter to the collector. For this freewheeling operation, the freewheeling diode is connected anti-parallel to the IGBT. Figure (b) shows an example of the internal structure of an RC-IGBT. Part of the P region in the collector electrode is replaced by an N region to form a PIN diode(*1) (P-N--P) with the P region in the emitter electrode. This PIN diode is connected anti-parallel to the IGBT like the FWD shown in Figure (a) and acts as a freewheeling diode. Nowadays, the applications of RC-IGBTs are expanding to the hard-switching fields in addition to voltage resonance.
(*1) A PIN diode is a diode with a high-resistance intrinsic (I) semiconductor region between P and N regions. Because of low dopant concentration, the intrinsic region has high resistance close to that of an intrinsic semiconductor. The FWD in an IGBT requiring high withstand voltage has this structure.