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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Power supply ON/OFF control and reverse connection protecting circuit (N-ch method)

Examples of ON/OFF control and reverse connection protecting circuits using N-ch MOSFET for 12 V power lines

Power supply ON/OFF control and reverse connection protecting circuit (N-ch method)

Lineup

U-MOS Series 40V N-ch power MOSFET

Part number

Drain current

On-resistance (Max)

@VGS=10 V

Package

XPN3R804PB

40 A

3.8 mΩ

TSON-Advance(WF)

TK1R4S04PB

120 A

1.35 mΩ

DPAK+

TPHR7904PB

150 A

0.79 mΩ

SOP Advance(WF)

TPWR7904PB

150 A

0.79 mΩ

DSOP Advance(WF)

TKR74F04PB

250 A

0.74 mΩ

TO-220SM(W)

TK1R5R04PB

160 A

1.5 mΩ

D2PAK+

Gate driver (for switch)

Part number

TPD7104AF

TPD7106F

TPD7107F
Package PS8 (2.8 x 2.9 mm) SSOP16 (5.5 x 6.4 mm) WSON10A (3 x 3 mm)
Function

High-side gate driver

High-side gate driver High-side gate driver

Number of output

1 output

1 output

1 output

Features

  • Operating power supply voltage range: 5 to 18 V
  • Built-in charge pump
  • Built-in power supply reverse connection protection function (Supported for power supply reverse connection protection FET applications)
  • Operating power supply voltage range: 4.5 to 27 V
  • Built-in charge pump
  • Built-in power supply reverse connection protection function (Supported for power supply reverse connection protection FET applications)
  • Operating power supply voltage range: 5.75 to 26 V
  • Built-in charge pump
  • Current sense output,
  • Protection and diagnosis output ; over current, over temperature,GND disconnect, load open, reverse battery (FET turn on)

General-purpose small-signal MOSFET

Part number

SSM3K7002KF

SSM3J168F

SSM3J66MFV

Package

S-Mini (SOT-346) S-Mini (SOT-346) VESM (SOT-723)

VDS(DC)   [V]

60

-60

-20

ID   [A]

0.4

-0.4

-0.8

RDS(ON) [Ω]

@VGS=4.5 V

Typ.

1.2

1.4

0.31

Max

1.75

1.9

0.39

Drive voltage   [V]

4.5

-4.0

-1.2

MOS Type

N-channel

P-channel

P-channel

General-purpose small-signal bipolar transistor

Package

SOT-23F

USM (SOT-323)

UFM (SOT-323F)

S-Mini (SOT-346)

Classification

|VCEO [V]|

|IC [mA]|

NPN

PNP

NPN

PNP

NPN

PNP

General purpose

50

150

 

 

2SC4116

2SA1586

2SC2712

2SA1162

50

500

       

2SC3325

2SA1313

Low noise

120

100

   

2SC4117

2SA1587

2SC2713

2SA1163

High current

50

1700

     

2SA2195*

   
Semi power 50 2000   TTA501        
100 2500 TTC501          

* : UFM (SOT-323F) package

General-purpose small-signal bias resistor built-in transistor (BRT)

Part number

NPN (BRT)

PNP (BRT)

Package

SOT-563

RN1907FE

RN2907FE

SOT-363

RN1901

RN2901

VCEO (Max)   [V]

50

-50

IC   [mA]

100

-100

TVS diode (for CAN communication)

Part number

DF3D18FU

DF3D29FU

DF3D36FU

Package

USM (SOT-323)

VESD   [kV]  @ISO10605

±30

±30

±20

VRWM  (Max)   [V]

12

24

28

Ct   (Typ./Max)   [pF]

9 / 10

6.5 / 8

RDYN   (Typ.)   [Ω]

0.8

1.1

1.5

Contacts

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