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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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SBDs employ a junction between semiconductor and metal such as molybdenum instead of pn junction. They are suitable for high-speed switching applications because of small forward voltage and short reverse recovery time.
A Schottky barrier diode (SBD) is a type of diode that has a junction formed between a semiconductor (typically an n-type semiconductor) and a metal such as platinum (Pt), molybdenum (Mo), or titanium (Ti), instead of a pn junction.
SBDs are designed to exploit a Schottky barrier created by a difference between the work function of a metal (i.e., the energy needed to remove an electron from the surface of a metal) and the electron affinity of a semiconductor. (In the case of an n-type semiconductor, a Schottky barrier is created only when a metal has a higher work function than the n-type semiconductor.)
SBDs have lower forward voltage than pn junction diodes because SBDs use a metal-semiconductor junction with a lower potential barrier than the pn junction.
The pn junction diode is a bipolar device in which both electrons and holes act as donors whereas the SBD, which is typically composed of an n-type semiconductor and a metal, is a unipolar device in which only electrons act as donors. Therefore, SBDs have no reverse recovery charge due to residual minority carriers, which is a matter of concern when using pn junction diodes. However, due to the electrostatic capacitance that exists between terminals, there is a reverse recovery time, although it is slight compared to pn junction diodes.
The low forward voltage and short reverse recovery time of SBDs make them suitable for high-speed switching applications.
Silicon SBDs withstand only several tens of volts whereas some SiC SBDs using wide bandgap semiconductor provide a withstand voltage of more than 600 V.
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