HN1B01FU

Transistor for low frequency small-signal amplification 2 in 1

Data sheet

HN1B01FU Data sheet/Japanese[Mar,2022]PDF: 732KB

Data sheet

HN1B01FU Data sheet/English[Mar,2022]PDF: 597KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 4KB

Simulation Model

LTspice Model[Mar,2019]ZIP: 8KB

Reliability Information

Reliability Data[Sep,2024]PDF: 249KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Nov,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Nov,2024]PDF: 85KB

Application Note

Surface Mount Small Signal Transistor (BJT) Precautions for use[Jan,2022]PDF: 732KB

Application Note

Basics of Diodes (Power Losses and Thermal Design)[Aug,2021]PDF: 649KB

Application Note

Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)[Aug,2021]PDF: 846KB

Application Note

Basics of Diodes (Types and Overview of Diodes)[Aug,2021]PDF: 1557KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Catalog

Selection Guide Small Signal 2024 Rev2.0[Jul,2024]PDF: 15538KB

Data sheet

HN1B01FU Data sheet/Japanese[Mar,2022]PDF: 732KB

Data sheet

HN1B01FU Data sheet/English[Mar,2022]PDF: 597KB

Application Note

Surface Mount Small Signal Transistor (BJT) Precautions for use[Jan,2022]PDF: 732KB

Application Note

Basics of Diodes (Power Losses and Thermal Design)[Aug,2021]PDF: 649KB

Application Note

Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)[Aug,2021]PDF: 846KB

Application Note

Basics of Diodes (Types and Overview of Diodes)[Aug,2021]PDF: 1557KB

Application Note

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

Application Note

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

Application Note

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

Application Note

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

Simulation Model

PSpice Model[Dec,2016]ZIP: 4KB

Simulation Model

LTspice Model[Mar,2019]ZIP: 8KB

Reliability Information

Reliability Data[Sep,2024]PDF: 249KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Nov,2024]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[Nov,2024]PDF: 85KB

Catalog

Selection Guide Small Signal 2024 Rev2.0[Jul,2024]PDF: 15538KB

Description

Application Scope General-purpose
Polarity PNP + NPN
Internal Connection Independent
Comments Rank is specified by hFE range.
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-363 (US6)
Package Image US6
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)		 2.0×2.1×0.9
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current (Q1) IC -0.15 A
Collector Current (Q2) IC 0.15 A
Collector-emitter voltage (Q1) VCEO -50 V
Collector-emitter voltage (Q2) VCEO 50 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
DC Current Gain hFE (Q1) (Max) hFE IC=-0.002A
VCE=-6V		 400 -
DC Current Gain hFE (Q1) (Min) hFE IC=-0.002A
VCE=-6V		 120 -
DC Current Gain hFE (Q2) (Max) hFE IC=0.002A
VCE=6V		 400 -
DC Current Gain hFE (Q2) (Min) hFE IC=0.002A
VCE=6V		 120 -
Collector Emitter Saturation Voltage (Q1) (Max) VCE(sat) IB=-10mA
IC=-0.1A		 -0.3 V
Collector Emitter Saturation Voltage (Q2) (Max) VCE(sat) IB=10mA
IC=0.1A		 0.25 V
Transition frequency (Q1) (Typ.) fT IC=-0.001A
VCE=-10V		 120 MHz
Transition frequency (Q2) (Typ.) fT IC=0.001A
VCE=10V		 150 MHz
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Dec,2016

Mar,2019

Sep,2024

Nov,2024

Nov,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS AEC-Q100
AEC-Q101		 Note
HN1B01FU-GR,LF 3000 Yes - General Use
HN1B01FU-GR,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
HN1B01FU-GR,LXHF 3000 - Yes Yes Automotive Use
HN1B01FU-Y,LF 3000 Yes - General Use
HN1B01FU-Y,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
HN1B01FU-Y,LXHF 3000 - Yes Yes Automotive Use

(Note)：For more information, please contact our sales or use the inquiry form on our website.


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Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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