Power MOSFET (N-ch single 30V<VDSS≤60V)
Application Scope | Automotive / Switching Voltage Regulators / Motor Drivers / DC-DC Converters |
---|---|
Polarity | N-ch |
Generation | U-MOSⅨ-H |
Internal Connection | Single |
PPAP | Capable(*) |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | S-TOGL |
---|---|
Package Image | |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
7.0×8.44×2.3 |
Package Dimensions | View |
Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 40 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 160 | A |
Power Dissipation | PD | 223 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.0 | V |
Gate threshold voltage (Min) | Vth | - | 2.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 1.8 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1 | mΩ |
Input capacitance (Typ.) | Ciss | - | 5300 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 84 | nC |
Reverse recovery time (Typ.) | trr | - | 73 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 113 | nC |
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