TPC8223-H

EOL announced

Power MOSFET (N-ch dual)

Description

Application Scope High-Efficiency DC-DC Converters / Notebook PCs / Mobile Equipments
Polarity N-ch×2
Generation U-MOSⅦ-H
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP-8
Package Image SOP-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.0×1.52
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 9.0 A
Power Dissipation PD 1.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 21
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 17
Input capacitance (Q1/Q2) (Typ.) Ciss - 1190 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 17 nC

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Dec,2016

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