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MOSFET Product lineup

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12V - 300V MOSFETs

Toshiba offers an extensive portfolio of low- to medium-VDSS MOSFETs in various packages ranging from ultra-small packages for small-signal applications to packages with a large current capacity for automotive applications. Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs. In addition, Toshiba has continually optimized MOSFET cell structures to improve the trade-offs between drain-source on-resistance and charge characteristics, which are important figures of merit of MOSFETs for switching applications.



Latest U-MOSⅨ-H Series
The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance.

Latest U-MOSⅨ-H Series


Low-Voltage Drive and  Low On-Resistance
Packaging trends for 12V - 300V MOSFETs
Thermally Enhanced DSOP Advance Package
Packaging for Low On-Resistance




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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.