DPAK+, DSOP Advance (WF), SOP Advance (WF), and TSON Advance (WF) adopt Cu connector structures, realizing high current conduction capability. Furthermore, the new packaging types, S-TOGL™ and L-TOGL™, achieve even higher current conduction capability by evolving the Cu connector structure into a Cu clip structure (internal postless structure) and adopting multi-pin structures. Additionally, the SOF-Dual currently under development reduces the mounting area by approximately 40% compared to using two SOP Advance (WF) units. This contributes to the miniaturization of sets. We are expanding our product lineup to meet various needs of automotive applications.
The small MOSFET offers a wide choice of breakdown voltages and drive voltages ranging from small-signal to middle-class semi-power types. There is a wide choice of package sizes ranging from 1x1 mm-class ultra-small packages to 3x3 mm, which contributes to miniaturization of sets by reducing the mounting area.
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* S-TOGL™、L-TOGL™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
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