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MOSFET Product lineup

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New devices in the new TO-247-4L package
600-V super-junction power MOSFETs (DTMOSIV-H series)

4-pin TO-247-4L package that brings out higher switching performance from a MOSFET chip

The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed.

Power MOSFETs in the TO-247-4L package help further improve the efficiency of the high-efficiency medium to large switching power supplies (with a level required by 80 PLUS*1TITANIUM and 80 PLUS PLATINUM).

Comparison of the outline dimensions of TO-247 and TO-247-4L

Comparison of the outline dimensions of TO-247 and TO-247-4L


Merit of the TO-247-4L Package

Accompanying the increasing switching speed and current capability of the DTMOS chip, the inductance of source wiring in a package has begun to have an adverse effect on its switching performance. In the TO-247-4L package, the gate-drive source terminal separates the power-line current from the gate drive current, reducing the impact of inductance from the gate-source voltage.

3-pin TO-247 package
The gate-source voltage, VGS, applied to a MOSFET chip causes back-EMF (VLS = LS*dID/dt), which is a function of the source wire inductance (LSource) and the slope of the drain current (dID/dt). Since the back-EMF voltage causes a drop in the voltage that is actually applied to the MOSFET chip, its switching speeds, especially the turn-on speed, become slower.
4-pin TO-247-4L package
In order to reduce the effect on the drive voltage, the source terminal on the drive side is bonded out from a position in the vicinity of a MOSFET chip separated from the source wire on the load side. As a result, the TO-247-4L package helps bring out the high switching performance of the MOSFET chip.

Mechanism of the TO-247-4L Package

Reduction in Turn-On Loss due to the Use of TO-247-4L

The waveform of gate-source voltage close to the MOSFET chip obtained from the simulation shows that the turn-on time of the MOSFET chip housed in the TO-247-4L package is shorter than that of the chip in the TO-247 package due to a difference in LSource. Actual measurements show that the TK62Z60X in the TO-247-4L package exhibits a turn-on loss 19% lower than that of the TK62N60X housed in the TO-247 package.

Both the simulation and actual measurements show that the use of the TO-247-4L package contributes to a reduction in the turn-on loss and an increase in switching speed.

Simulation circuit model
Turn-On Waveform (Simulated)

Simulation circuit model, Turn-On Waveform (Simulated)

Turn-On Waveform (Measured)

Turn-On Waveform (Measured)

Product Lineup

Toshiba has added four devices in the TO-247-4L package (TK25Z60X, TK31Z60X, TK39Z60X and TK62Z60X) to the portfolio of its 600-V DTMOSIV-H*2power MOSFET series. Fabricated using a super-junction structure, the DTMOSIV-H series exhibits lower on-resistance and higher switching speed than the previous series.


Part Number Polarity Absolute Maximum Ratings RDS(ON) max


Qg typ_(nC) Ciss typ_(pF)
TK25Z60X N-ch 600 25 0.125 40 2400
TK31Z60X 600 30.8 0.088 65 3000
TK39Z60X 600 38.8 0.065 85 4100
TK62Z60X 600 61.8 0.040 135 6500

*1 A certification program promoted by 80 PLUS for efficient energy use of electric appliances. It certifies products that have more than 80% DC-to-AC conversion efficiency.

*2 Fourth-generation high-speed-switching series (DTMOIV-H) with a super-junction structure

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.