New devices in the new TO-247-4L package
600-V super-junction power MOSFETs (DTMOSIV-H series)

4-pin TO-247-4L package that brings out higher switching performance from a MOSFET chip

The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed.

Power MOSFETs in the TO-247-4L package help further improve the efficiency of the high-efficiency medium to large switching power supplies (with a level required by 80 PLUS^*1TITANIUM and 80 PLUS PLATINUM).

Comparison of the outline dimensions of TO-247 and TO-247-4L

Features

Merit of the TO-247-4L Package

Accompanying the increasing switching speed and current capability of the DTMOS chip, the inductance of source wiring in a package has begun to have an adverse effect on its switching performance. In the TO-247-4L package, the gate-drive source terminal separates the power-line current from the gate drive current, reducing the impact of inductance from the gate-source voltage.

3-pin TO-247 package: The gate-source voltage, V_GS, applied to a MOSFET chip causes back-EMF (V_LS = L_S*dI_D/dt), which is a function of the source wire inductance (L_Source) and the slope of the drain current (dI_D/dt). Since the back-EMF voltage causes a drop in the voltage that is actually applied to the MOSFET chip, its switching speeds, especially the turn-on speed, become slower.

4-pin TO-247-4L package: In order to reduce the effect on the drive voltage, the source terminal on the drive side is bonded out from a position in the vicinity of a MOSFET chip separated from the source wire on the load side. As a result, the TO-247-4L package helps bring out the high switching performance of the MOSFET chip.

Mechanism of the TO-247-4L Package

Reduction in Turn-On Loss due to the Use of TO-247-4L

The waveform of gate-source voltage close to the MOSFET chip obtained from the simulation shows that the turn-on time of the MOSFET chip housed in the TO-247-4L package is shorter than that of the chip in the TO-247 package due to a difference in L_Source. Actual measurements show that the TK62Z60X in the TO-247-4L package exhibits a turn-on loss 19% lower than that of the TK62N60X housed in the TO-247 package.

Both the simulation and actual measurements show that the use of the TO-247-4L package contributes to a reduction in the turn-on loss and an increase in switching speed.

Simulation circuit model

Turn-On Waveform (Simulated)

Simulation circuit model, Turn-On Waveform (Simulated)

Turn-On Waveform (Measured)

Turn-On Waveform (Measured)

Product Lineup

Toshiba has added four devices in the TO-247-4L package (TK25Z60X, TK31Z60X, TK39Z60X and TK62Z60X) to the portfolio of its 600-V DTMOSIV-H^*2power MOSFET series. Fabricated using a super-junction structure, the DTMOSIV-H series exhibits lower on-resistance and higher switching speed than the previous series.

(@Ta=25°C)

Part Number	Polarity	Absolute Maximum Ratings		R_DS(ON) max ＠V_GS=10V(V)	Q_g typ_(nC)	Ciss typ_(pF)
Part Number	Polarity	V_DSS(V)	I_D(A)	R_DS(ON) max ＠V_GS=10V(V)	Q_g typ_(nC)	Ciss typ_(pF)
TK25Z60X	N-ch	600	25	0.125	40	2400
TK31Z60X		600	30.8	0.088	65	3000
TK39Z60X		600	38.8	0.065	85	4100
TK62Z60X		600	61.8	0.040	135	6500

*1 A certification program promoted by 80 PLUS for efficient energy use of electric appliances. It certifies products that have more than 80% DC-to-AC conversion efficiency.

*2 Fourth-generation high-speed-switching series (DTMOIV-H) with a super-junction structure

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