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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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MOSFET Driver IC Application and Circuit of the TCK401G

This reference design provides technical information on slew rate control, auto discharge and other built-in functions for designing load switch circuit suitable for USB-PD.

Battery charger circuit of MOSFET Driver IC application and circuit of the TCK401G.
Battery charger circuit
Slew rate control waveform of MOSFET Driver IC application and circuit of the TCK401G.
Slew rate control waveform

Description

  • Can realize switch module combination with 30V Nch MOSFET
  • For mobile appication power management with USB connector
  • Back current protection feature and slew rate control circuit

Features

  • Wide input voltage range: VIN = 2.7 to 28V
  • Auto output discharge function
  • Charge pump for VGATE
  • Inrush current suppression circuit
  • Overvoltage lockout (≥28V)
  • Undervoltage lockout (≤2.7V)
  • Protection against reverse current from external back-to-back MOSFETs

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Name Date

Design, File

“Design・File” contains the contents listed below.

Name Date

Toshiba items

Part Number Device Category Portion Usage Description
TCK401G* Driver IC 1 VIN=7~28V/Inrush current reduction / Output discharge /WCSP6E
SSM6K513NU MOSFET 2 U-MOSIX-H/30V/8mΩ(max)@VGS=4.5V/UDFN6B
* : New product

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