Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
Description
| Circuit | Dual input and single output power source multiplexer circuit |
|---|---|
| Input VINA/ Input VINB | 5 V/20 V, 5 V/12 V, 9 V/20 V, 5 V/12 V, 12 V/24 V |
| Output current (Max.) | 3 A to 5 A |
Features
- 2 × 2 cm small board mounted, 2 input 1 output power multiplexer circuit
- Lineup of 5 types of reference circuits with input voltage from 5 V to 24 V and output current up to 5 A.
- Supports switching of various power supply systems such as USB power delivery, fast charging, and wireless power supply
- MBB (Make-Before-Break), BBM (Break-Before-Make) operation switchable
- Ideal diode characteristics
Reference design files
Design, Document
“Design・Document” contains the documents listed below.
Design, File
“Design・File” contains the contents listed below.
*1：Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.
*2：The data was generated on CR5000BD.
Toshiba items
| Part Number | Device Category | Portion Usage | Description |
|---|---|---|---|
| CUHZ12V | Zener diode | Module board | VZ = 12 V/US2H |
| CUHZ16V | Zener diode | Module board | VZ = 16 V/US2H |
| CUHZ30V | Zener diode | Module board | VZ = 30 V/US2H |
| CUHZ6V8 | Zener diode | Module board | VZ = 6.8 V/US2H |
| DSF01S30SL | Shottky Barrier Diode | Module board | VR = 30 V, IO = 100 mA/SL2 |
| SSM3K15ACTC | Nch-MOSFET | Module board | VDSS = 30 V, ID = 100 mA/CST3 |
| SSM3K72CTC | Nch-MOSFET | Module board | VDSS = 60 V, ID = 150 mA/CST3C |
| SSM6K513NU | Nch-MOSFET | Module board | VDSS = 30 V, ID = 15 A, 12 mΩ＠VGS = 4.5 V /UDFN6B |
| TC75S70L6X | Comparator | Module board | Push-pull output/Input and output full range/MP6C |
| TC7PZ14FU | L-MOS | Module board | Schmitt Inverter/US6 |
| TC7WZ04FK | L-MOS | Module board | Inverter/US8 |
| TCK420G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCK421G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCK422G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCK423G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCK424G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCK425G | MOSFET Gate Driver IC | Module board | Vopr = 2.7 V to 28 V/WCSP6G |
| TCKE712BNL | eFuseIC | Module board | Vopr = 4.4 V to 13.2 V/WSON10B |
| TCKE812NL | eFuseIC | Module board | Vopr = 4.4 V to 18 V/WSON10B |
| TCR1HF33B** | LDO | Module board | VOUT = 3.3 V/SMV |
| TCR1HF50B** | LDO | Module board | VOUT = 5.0 V/SMV |
| TPHR6503PL1 | Nch-MOSFET | Module board | VDSS = 30 V/SOP Advance(N) |
| TPHR8504PL1 | Nch-MOSFET | Module board/ Base board | VDSS = 40 V/SOP Advance(N) |
| TPN1R603PL | Nch-MOSFET | Module board | VDSS = 30 V/TSON Advance |
| TCK402G | MOSFET Gate Driver IC | Base board | Vopr = 2.7 V to 28 V/WCSP6E |
| TC7PZ17FU | L-MOS | Base board | Dual Schmitt Buffer/US6 |
| 74HC123D | CMOS logic IC | Base board | Dual Monostable Multivibrator/SOIC16 |
| TAR5SB48 | LDO | Base board | VOUT = 4.8 V/SMV |
| RN1114MFV | Bias resistor built-in transistor (BRT) | Base board | NPN/1 kΩ/10 kΩ/VESM |
| RN2102MFV | Bias resistor built-in transistor (BRT) | Base board | PNP/10 kΩ/10 kΩ/VESM |
| 1SS307E | Switching diode | Base board | VR = 80 V/100 mA/ESC |
**: Under development
Documents
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