1.6 kW Server Power Supply (Upgraded)

Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.

PCB Photo (example)
Board Appearance
TRS6E65H TRS6E65H TRS6E65H TK095N65Z5 TK095N65Z5 TK095N65Z5 TK095N65Z5 TK095N65Z5 TPHR6503PL1 TPHR6503PL1 TPH2R408QM TPH2R408QM TPH2R408QM DCL540C01 DCL540C01

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Features

  • Equipped with the latest generation of products to achieve higher efficiency than existing power supplies
  • 1U rack size high efficiency and high power output power supply
  • Total efficiency 95.4 % (Vin=230 V at 50 % load condition)
  • Outline size : 307 mm x 135 mm x 43 mm (including the base plate under the PCB and the top plate covering over the heatsinks)
  • Provides appropriate power devices (MOSFET and SiC diode) and digital Isolator totally

Description

Input voltage AC 90 V to 264 V
Output voltage DC 12 V
Output power 0.8 kW (AC 100V system input), 1.6 kW (AC 200 V system input)
Circuit topology Semi-Bridgeless PFC, Phase-Shift Full-Bridge + Synchronous Rectification, Oring Circuit for Output
Efficiency Curves
Efficiency Curves

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

*1:Actual PCB was designed on CR5000BD. The other files were made from CR5000BD file.

*2:The data was generated on CR5000BD.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) Primary side・4 N-ch MOSFET, 650 V, 0.095 Ω@10V, TO-247, DTMOSⅥ
Power MOSFET (N-ch single 60V<VDSS≤150V) Secondary side・12 N-ch MOSFET, 80 V, 0.00243 Ω@10V, SOP Advance, U-MOSⅩ-H
Power MOSFET (N-ch single VDSS≤30V) Oring ・10 N-ch MOSFET, 30 V, 0.00065 Ω@10V, SOP Advance(N), U-MOSⅨ-H
Power MOSFET (N-ch 500V<VDSS≤700V) PFC・2 N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247, DTMOSⅥ
SiC Schottky barrier diode PFC・2 650 V/6 A SiC Schottky Barrier Diode, TO-220F-2L
Standard Digital Isolators Communication between primary-side and secondary-side・1 HIGH SPEED QUAD CHANNEL DIGITAL ISOLATORS, High-speed, 150 Mbps, 5000 Vrms, 16pin SOIC Wide body

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

Applications

Server
Such as low power consumption and miniaturization are important in designing server. Toshiba provides information on a wide range of semiconductor products suitable for power supply units, motor driving unit, over temperature monitoring unit, etc., along with circuit configuration examples.

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